| 摘要 |
PURPOSE:To enable field effect transistors to be formed formed evenly in high concentration on a large substrate by a method wherein a gate electrode, an insulating film, a semiconductor layer comprising organic high molecule formed by electrolytic polymerication are formed on an insulating substrate and then a source electrode and a drain electrode are formed thereon. CONSTITUTION:A gate electrode 2 is formed on an insulating substrate 1; an insulating film 3 is formed on the gate electrode 2 by electron beam evaporation an electrolytic polymerized film 4 is formed by impressing the insulating periodic reverse bias voltage for specific time using the gate electrode 2 as an anode; and then a source electrode 5 and a drain electrode 6 and formed on the film 4. In order to form the electrolytic polymerized film 4, an electrolytic bath containing electrolyte comprising, e.g., 1.0g of pyrrole, 1.2g of lithium borofluoride and 1,000ml of acetonitride is prepared; platinum sheet as cathode, silane wire as reference electrode are provided; the substrate 1 is impressed with 0.68V as normal bias for reference electrode for two seconds and 0.5V as reverse bias for two seconds to perform the electrolytic polymerization for two hours for cleaning the substrate 1. By means of this electrolytic polymerization, the dispersion of element characteristics can be controlled. |
