| 摘要 |
PURPOSE:To simplify FET measurement by a method wherein the field insulating film same as the FET or of the same composition as the FET and the check pattern for the source and drain interval which is same as the minimum dimension within the FET, are contained in the subject semiconductor device. CONSTITUTION:When a voltage is applied to the drain and a zero potential is given to a gate and the source, the electric field is divided into two, the electric field going to the gate electrode becomes small in proportion to the increase in thickness of the insulating film and the electric field going to the source is intensified. Accordingly, punch-through voltage BVp is reduced. When the length of a channel is short, the BVp is also small. At this point, for the check pattern to be used in BVp measurement, a field insulating film is used as the insulating film at the gate region, and when the FET, having the source and drain interval which is same as the minimum dimension in the FET device, is used, the detection coefficient of the preliminary simplified measurement can be improved to the maximum extent. |
