Compensation doping of group III-V materials

摘要

A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.