| 摘要 |
PURPOSE:To realize formation of a fine contact hole by forming a contact hole which is larger than the final target size and then forming a sidewall of determined size with an insulating film on the sidewall of contact hole. CONSTITUTION:An interlayer insulating film 12 is formed on a semiconductor substrate 11. In case a resolution limit of photoresist by light beam is set to 0.7 mum or so, a resist pattern 13 with the resolution limit of 1 mum or more which may be analyzed with sufficient stability is formed and a contact hole 14 is formed by etching the resist pattern. Next, a sidewall 35 is formed to the sidewall of contact hole 14 by the anisotropic etching method to form the contact hole 34 of the target size. Thereby, a fine contact hole of 0.7 mum or less can also be formed easily.
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