| 摘要 |
<p>PURPOSE: To provide the blank for a phase-shift mask appropriate to pattern a halftone material film with high precision by etching. CONSTITUTION: A halftone material film 2, a metallic film 5 capable of selectively etching the halftone material film 2 and a resist film 3 are laminated on a transparent substrate 1 to prepare a blank, the resist film 3 is patterned, and the metallic film 5 is patterned by etching with the resist film 3' as a mask, the halftone material film 2 is etched with the patterned resist film 3' and the metallic film 5' as a mask, and the resist film 3' and the metallic film 5' are released. When the halftone material film 2 is etched with the metallic film 5' as the mask, the metallic film 5' is not etched, hence the dimensions of the halftone material film 2 are controlled with high precision.</p> |
