| 摘要 |
PURPOSE:To obtain a semiconductor device having a large area, in which a polycrystalline thin film transistor is an element, by depositing contact layers, which connect a semiconductor layer and source and drain electrodes, only in contact hole parts at a temperature lower than a specified temperature of a substrate. CONSTITUTION:A semiconductor layer 102 is deposited on a substrate 101. Then, after an insulating layer 103 is deposited, contact hole parts 104 and 105 for embedding a source and a drain are formed by a photolithography method. Then contact layers 106 and 107 are deposited in the contact hole parts 104 and 105 by a CVD method. At this time the film is not deposited on a place other than the contact hole parts. Then, an insulating layer 109 is deposited again. The contact holes 110 and 111 are formed. Metal is evaporated on the entire surface. Thereafter, a source electrode 112, a gate electrode 113 and a drain electrode 114 are formed by a photolithography method, and a thin film transistor is completed. |
