| 摘要 |
<p>PURPOSE:To prevent the residual images and burns of the MIM active elements of an active matrix liquid crystal panel by forming an insulating film constituting the MIMs of plural layers of insulating films including specific semiconductor thin films. CONSTITUTION:The 2nd insulating thin film 3 is formed extremely thin (<=100Angstrom mass film thickness) together with the 1st insulating film 2 formed by anodizing the surface of a 1st metal 1. The insulators of the MIM elements are constituted of the multilayered film structures including these two-layered films. The materials of the 2nd insulating thin film 3 are exemplified by IV element semiconductors or the oxides, nitrides, carbides, etc., thereof. The representative materials are Si, SiOX, SiNX, etc. The 2nd insulating film 3 is first sputtered and thereafter, the film of the 2nd metal 4 is continuously formed by an Rf sputtering film forming method. The films of transparent picture element electrodes 5 consisting of ITO, et., are thereafter formed by sputtering and are subjected to photopatterning. The shift of electric characteristics of the MIM elements by the voltage impression thereto is drastically decreased and the restoration time of the characteristic shift is greatly shortened in this way.</p> |
