发明名称 METHOD OF FORMING RESIST PATTERN USING MULTILAYER RESIST
摘要 PURPOSE:To use the same X ray source for a reduction X-ray aligner and a 1:1 X-ray aligner by adopting a light beam adjusted so as to reduce the intensity of light of a wavelength band that passes an X-ray absorber and the intensity of light of a wavelength band that is largely absorbed by an X-ray photoresist layer. CONSTITUTION:A mirror system 21 is installed on an extended line (route) of a light beam emitted from an SR ring 20. A filter system 22 is installed on an extended line of the light beam emitted from the mirror system 21. The filter system 22 receives the light beam emitted from the mirror system 21 and adjusts the received light beam so that the light may have a gentle peak in the wavelength band over 50Angstrom and below 200Angstrom and the intensity of light in the wavelength band shorter than 50Angstrom and longer than 200Angstrom and it may be 1/10 or less than the intensity of light whose wavelength is longer than 50Angstrom , and shorter than 200Angstrom . The intensity of light in the wavelength shorter than 30Angstrom , and longer than 300Angstrom and over is further adjusted so that it may drop dramatically.
申请公布号 JPH06252033(A) 申请公布日期 1994.09.09
申请号 JP19930038845 申请日期 1993.02.26
申请人 KAWASAKI STEEL CORP 发明人 KOBAYASHI SHUNICHI
分类号 G03F7/20;G03F7/26;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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