| 摘要 |
PURPOSE:To obtain an insulated-gate type transistor wherein breakdown due to latch up is prevented, by widening the stripe width of a main electrode, formed on the upper surface of a fourth semiconductor layer in proximity to a semiconductor region, than that of the main electrode in the semiconductor region. CONSTITUTION:When an insulated-gate type bipolar transistor is in the on state, holes supplied from a p<+> semiconductor layer 1 direct under a p-type semiconductor region 11 go to an emitter electrode 9 through a contact hole CHp with a width of Wch2 formed in the p-type semiconductor region 11. If the width Wch2 of the contact hole CHp in the p-type semiconductor region 11 is large enough to allow the entire hole current to pass through, that prevents excessive hole current from being concentrated on the IGBT cells in proximity to the p-type semiconductor region 11. Further, that does not make the IGBT cells in proximity to the p-type semiconductor 11 more likely to be broken down due to latch up than those in the other regions. |
