Rough dielectric film by etchback of residue

摘要

A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having peaks (108) formed on a surface thereof. The peaks (108) are created by forming a photoresist residue layer (130) on the polysilicon layer of the storage node (108). The structure is then dry etched using the residue layer (130) as a mask to create peaks (108).