发明名称 Leistungs-Halbeiterbauelement
摘要 In a power semiconductor device having a power circuit 1 and a control circuit 2 incorporated in a resin case 4, said circuits being mounted on different substrates 1a and 2a and interconnected internally, and power terminals 6 and control terminals 7 connected to the power and control circuits, respectively, being drawn out of the case, the power terminals 6, the control terminals 7 and lead pins 13 are preliminarily molded by an insert technique together with the case as the power terminals 6 and the control terminals 7 are arranged at the peripheral edge of the case 4 whereas the lead pins 13 for establishing interconnection between the power and control circuits are arranged on a pin block 12 provided at the middle stage within the case, and the substrate 1a for the power circuit is mounted on a heat dissipating metal base 11 combined with the bottom side of the case 4 and the substrate 2a for the control circuit on the pin block 12, with the power terminals, control terminals and the pin block being soldered together to assemble the power semiconductor device. <IMAGE>
申请公布号 DE69318658(T2) 申请公布日期 1998.09.10
申请号 DE1993618658T 申请日期 1993.07.12
申请人 FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP 发明人 SOYANO, SHIN, C/O FUJI ELECTRIC CO., LTD., KAWASAKI-SHI, KANAGAWA, JP;TOBA, SUSUMU, C/O FUJI ELECTRIC CO., LTD., KAWASAKI-SHI, KANAGAWA, JP
分类号 H01L25/07;H01L21/56;H01L25/16;H01L25/18;H05K1/14;(IPC1-7):H01L25/16 主分类号 H01L25/07
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