PLASMA ENHANCED CVD SYSTEM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a plasma enhanced CVD system which can shorten the time required for hydrogenating the polycrystalline silicon of a thin film transistor(TFT) and forming a transparent film on the TFT. SOLUTION: This plasma enhanced CVD system is provided with a first fixed capacitor (1) for high-frequency power matching, a second fixed capacitor (2) for high-frequency power matching wired in parallel with the capacitor (1), and a switching means (4) which selectively switches the capacitors (1) and (2) for using either one or both of the capacitors (1) and (2).