| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor circuit device with which saves power consumption. SOLUTION: This device is provided with a first circuit to be controlled 100, consisting of at least one MOS transistor and a substrate bias control means 102 for generating substrate bias potential of the MOS transistor and is the one of permitting a comparatively large current to flow between the drain and the source of the MOS transistor, by arranging the means 102 to be a first state and for controlling a comparatively large current to be a smaller value between the drain and the source of the MOS transistor by arranging the means 102 to be a second state. In this case, the device is controlled in such a way that value of a substrate bias to be given to the first circuit to be controlled in the second state is a voltage value which is higher than that in the first state, concerning the substrate bias of a PMOS transistor and is the voltage value which is lower for the substrate bias of an NMOS transistor and that a power source voltage to be given to the first circuit to be controlled in the second state becomes smaller than that in the first state.
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