METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve the reliability of a manufacturing process by growing a chemical oxide layer on an exposed portion of silicon substrate. CONSTITUTION: A method for forming an isolation layer of a semiconductor device comprises the following steps. A pad oxide layer(12) and a nitride layer(14) are formed on a semiconductor substrate(10). The substrate is patterned by using a photoresist for isolating mask and a trench is formed therefrom. The photoresist is removed and a shallow sidewall oxide layer(18) is formed on an inner portion of the trench. The sidewall oxide layer(18) is removed and a cleaning process is performed by using a mixed solution of NH4OH, H2O2, DI. A chemical oxide layer is formed on the exposed trench region. An isolation layer formed with the buried oxide layer is formed by performing an oxidization process. The nitride layer and the pad oxide layer are formed.