| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma etching method capable of restraining an active gas unhelpful to plasma etching from being discharged out into the air. SOLUTION: This device 10 is composed of a vacuum chamber 12, a plasma processor 14, a helium feeder 16, a PFC feeder 18, a switching means 20, and an exhaust vent 22. By the use of the device 10, helium is introduced into the vacuum chamber 12 through the intermediary of the switching means 20. Helium is discharged out through the exhaust vent 22 with the introduction of helium, and the vacuum chamber 12 is set at an optional inner pressure. After the vacuum chamber 12 is stabilized at an optional pressure, plasma is generated in the vacuum chamber 12, and helium is replaced with carbon tetrachloride through the switching means 20, by which carbon tetrachloride unhelpful to plasma etching can be prevented from being discharged out into the air.</p> |
