| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor with improved aperture member. SOLUTION: In the CMOS image sensor, a second conductivity type first well 23 where second potential is supplied for inverse biasing is formed on the surface of a first conductivity type semiconductor 20 where first potential Vdd is supplied. A plurality of linear or array-like pixels 30 having a photodiode 7 and a transistor 8 for amplification for amplifying the change in potential due to an electric charge generated by the photodiode 7 are arranged in the first well 23. In the CMOS image sensor, a first conductivity type second well 27 is formed so that it is in contact with a first conductivity type high- concentration diffusion layer 8D and reaches the substrate 20 provided in the pixels 30, and the first potential Vdd that has been set to the substrate 20 is supplied to the high-concentration diffusion layer 8D via the second well 27. |
