发明名称 CLEANING LIQUID COMPOSITION FOR SEMICONDUCTOR SUBSTRATE, CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF CONDUCTIVE STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a cleaning liquid composition for a semiconductor substrate capable of effectively removing polymers without damaging a metal and an oxide film, a cleaning method of the semiconductor substrate using the same and a manufacturing method of a conductive structure. <P>SOLUTION: The cleaning liquid composition for the semiconductor substrate contains an acidic aqueous solution, an metallic corrosion inhibiting compound expressed by a chemical formula (1) (wherein, R1 to R5 independently represent one of hydrogen, an alkyl group, an aryl group, -(CH<SB>2</SB>)n-COOH, -H<SB>2</SB>PO<SB>3</SB>, or -(CH<SB>2</SB>)n-H<SB>2</SB>PO<SB>3</SB>, a is 1 to 4, b, c and d are each 0 to 2, and b+c+d&ge;1), and a surface active agent. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005236280(A) 申请公布日期 2005.09.02
申请号 JP20050020268 申请日期 2005.01.27
申请人 SAMSUNG ELECTRONICS CO LTD;DONGWOO FINE-CHEM CO LTD 发明人 KO INHYAKU;KO YOEI;IN HEIBUN;KIM KYUNG-HYUN;KIM KY-SUB;SONG SUN-YOUNG;LEE HYUK-JIN;KIM BYUNG-MOOK;LEE KWANG-WOOK
分类号 C11D1/722;C09K13/04;C09K13/08;C11D1/00;C11D3/02;C11D3/04;C11D3/20;C11D3/30;C11D3/36;C11D3/39;C11D11/00;C11D17/08;C23G5/036;H01L21/02;H01L21/28;H01L21/30;H01L21/302;H01L21/304;H01L21/321;H01L21/3213;H01L21/82;H01L21/8239;H01L21/8242;H01L27/108;H01L29/78 主分类号 C11D1/722
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