| 摘要 |
Semiconductor structures are formed with semiconductor layers having reduced compositional variation. Top surfaces of the semiconductor layers are substantially haze-free.
The method comprises the formation of a semiconductor layer (16) over a top surface of the substrate (12), the semiconductor layer (16) including at least two elements, the elements being distributed to define an initial compositional variation within the semiconductor layer, in which forming the semiconductor layer comprises forming the semiconductor layer (16) having a haze, and planarizing the top surface of the semiconductor layer (16) having a haze. |
