| 摘要 |
A deposition apparatus includes an Atomic Layer Deposition (ALD) chamber, a system-control unit which generates a control signal, a solenoid valve which supplies air pressure in response to the control signal generated by the system-control unit, a gas line which supplies a process gas, an air pressure valve which opens and closes in response to the air pressure supplied by the solenoid valve to selectively supply the process gas from the gas line for the ALD chamber, and a detection unit installed in the air pressure valve which generates a detection signal indicative of at least one of an opened and closed state of the air pressure valve. The detection signal generated from the detection unit is transmitted to the system control unit, and the system control unit compares a calculated open duration of the air pressure valve with an actual open duration of the air pressure valve. |
