| 摘要 |
PROBLEM TO BE SOLVED: To prevent damages to a dummy element separation region which may be caused by dishing by CMP in the lower part of a region where several metal fuses are formed by multilayer metal wiring and may be caused by fuse blow and to prevent metal short-circuit between fuse metals. SOLUTION: The semiconductor device is provided with: a semiconductor substrate 21 having a fuse region; the dummy element separation region 18 of trench type which is formed in the semiconductor substrate 21; several dummy element regions 20 which are formed in the semiconductor substrate 21 in such a way that they are surrounded by the dummy element separation region 18 and exhibit an occupancy in the fuse region equal to or higher than a specified value; and the several metal fuses formed of the multilayer metal wiring which are formed in the fuse region on the semiconductor substrate 21 including the dummy element separation region 18 and the dummy element regions 20 through interlayer insulating films. The several dummy element regions 20 are formed only in the lower part of at least some metal fuses of the several metal fuses. COPYRIGHT: (C)2007,JPO&INPIT |
