| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide Schottky junction semiconductor device capable of controlling a Schottky barrier height to a desired value, in a range of making a power loss minimum without increasing n-factors while using a Ta electrode as a Schottky electrode, and its manufacturing method. SOLUTION: Ta is deposited on a crystal face of an n-type silicon carbide epitaxial film, in which an inclined angle from a (000-1) C face is in a range of 0-10°, so as to form the Schottky electrode by executing heat treatment to it in a temperature range of 300-1,200°C after the deposition. COPYRIGHT: (C)2007,JPO&INPIT |
