| 摘要 |
PROBLEM TO BE SOLVED: To provide a crack inspection device of a polycrystalline semiconductor wafer, capable of detecting internal cracks, even with respect to the polycrystalline semiconductor wafer having grain boundary. SOLUTION: A computer 10 is constituted so as to photograph the image due to the transmitted light of infrared rays irradiated at the back of a polycrystalline silicon wafer 2 from an infrared floodlight projector 20 for transmission by an infrared camera 40 and the image due to the reflected light of infrared rays irradiated on the surface of the polycrystalline silicon wafer 2 from an infrared floodlight projector 30 for reflection, to compare the captured image data due to the transmitted light with the image data due to the reflected light. The difference between the image data, due to the transmitted light and image data acquired by the positive/negative reversal of the image data due to the reflected light, are taken at each pixel corresponding to the same position on either one of the surfaces of the polycrystalline silicon wafer 2 and non-coincidence image data, having the pixel at a position where the difference is larger than a predetermined value as a non-coincidence pixel, are generated. When the region containing the non-coincidence pixel satisfies predetermined crack conditions, it is decided that there is a crack in the polycrystalline semiconductor wafer. COPYRIGHT: (C)2007,JPO&INPIT
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