| 摘要 |
A capacitor for a semiconductor device and a forming method thereof are provided to prevent the generation of leakage current around the lower end of a lower electrode by improving the thick uniformity of a dielectric layer. An insulating layer(210) having a through-coupling contact(230) is formed on a semiconductor substrate(100). A dopant source layer(310) is formed on the insulating layer. A mold layer(350) is formed on the dopant source layer, and is patterned to form an opening hole(351) exposing the coupling contact. A non-doped silicon layer is formed on the mold layer along a profile of the opening hole. Lower electrodes(400,401) are formed adjacent to the coupling contact by diffusion of the dopant at an lower end of the non-doped silicon layer. A dielectric layer(500) and an upper electrode(600) are formed on the lower electrode.
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