发明名称 |
Method for producing monocrystalline structures |
摘要 |
In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method according to the invention, the strip is of such a width that no overlapping occurs, since the width is adapted to the contour of the area to be repaired.
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申请公布号 |
US7306670(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20030729201 |
申请日期 |
2003.12.05 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BECK THOMAS;BOSTANJOGLO GEORG;COX NIGEL-PHILIP;WILKENHOENER ROLF |
分类号 |
B23P9/00;C30B13/00;B22D27/04;B23K15/00;B23K26/00;B23K26/06;B23K26/073;C30B11/00;C30B13/22;C30B13/24;F01D5/28;F02C7/00 |
主分类号 |
B23P9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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