| 摘要 |
PROBLEM TO BE SOLVED: To provide an LDMOS having a structure, capable of improving the breakdown strength. SOLUTION: A recess, having a trapezoidal plan shape, is provided on a gate 105a for forming an area which is likely to concentrate the electric field on a p-type base region 106a, a cut part of an n+-type source diffused layer 112a, is provided near the recess to suppress the increase of the diffusion resistance at this part. |
