| 发明名称 |
Semiconductor memory device having self-aligned charge trapping layer |
| 摘要 |
A semiconductor memory device having a self-aligned charge trapping layer and a method of manufacturing the same in which a consistent length of an ONO layer is ensured. Here, an insulating stacked structure is self-aligned to a bottom surface of conductive spacers.
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| 申请公布号 |
US7345336(B2) |
申请公布日期 |
2008.03.18 |
| 申请号 |
US20040000011 |
申请日期 |
2004.12.01 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON HEE-SEOG;YOON SEUNG-BEOM;KIM YONG-TAE |
| 分类号 |
H01L21/8247;H01L29/792;H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/788 |
主分类号 |
H01L21/8247 |
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