发明名称 |
Method of forming a semiconductor device |
摘要 |
A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.
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申请公布号 |
US7402485(B1) |
申请公布日期 |
2008.07.22 |
申请号 |
US20050229864 |
申请日期 |
2005.09.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EN WILLIAM G.;KAMMLER THORSTEN;PATON ERIC N.;LUNING SCOTT D. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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