| 摘要 |
<p>PURPOSE:To obtain a liquid-phase epitaxial layer of n-type AlxGa1-xAs, without changing its original form, on a GaAs crystal surface with a fine structure such as a periodic structure formed. CONSTITUTION:On n-type GaAs (100) substrate 1, a periodic structure of period 3600Angstrom , depth 500Angstrom and azimuth (110) is formed by using interference light of an Ar laser. On it, n-type Al0.3Ga0.7As layer 2 is formed by liquid-crystal epitaxial growth at a starting temperature of 765 deg.C and a temperature fall speed of 5 deg.C/sec. while keeping n-type carrier density below 1 X 10<17>cm<-3>. Althought the periodic structure changes in height (h) as shown by 3 and 4 before and after the growth, the original form of the fine structure does not change. Consequently, reproduction is attained with the composition rate of Al within the range of 0<=x<=0.5, and the 1st layer on the periodic structure surface is not limited to p-type AlxGa1-xAs as usual.</p> |
