| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a leak current of a semiconductor memory which has a redundant cell array. <P>SOLUTION: A regular cell array and a redundant cell array respectively have a regular memory cell and redundant memory cell which receive first, second, and third power supply voltages. The difference between the second power supply voltage and third power supply voltage is smaller than the difference between the first power supply voltage and third power supply voltage. The power supply control circuit supplies the first power supply voltage to the regular cell array and the second power supply voltage to the redundant cell array when the redundant cell array is not used during the normal operation for allowing access to the memory cell. The leak current (power supply current) of the unused redundant cell array can be reduced because the difference between two power supply voltages supplied to the redundant memory cell of the unused redundant cell array can be reduced. Therefore, the standby current of the semiconductor memory can be reduced when no defective memory cell exists. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
