Drive circuit and method for mosfet

摘要

A triggering circuit (10)for an insulated gate semiconductor device such as a MOSFET (12) comprises a charge storage device (14) and a fast switching device (16) connected in a circuit to a gate (20) of the MOSFET. The fast switching device is able to switch between an off and an on state in a first time period shorter than a specified turn-on delay time of the MOSFET and the fast switching device is further controllable to move charge between the storage device and the gate, so that the MOSFET switches between an off state and an on state in a second time period shorter than a specified rise time or fall time for the MOSFET.