FINFET AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a FinFET and a manufacturing method thereof. SOLUTION: The pin FET includes: an active fin 102 provided on a substrate 100; a gate oxide film pattern 104 provided on the surface of the active fin 102; a first electrode pattern 106b which is provided on the gate oxide film pattern 104 and extended to cross the active fin 102; a second electrode pattern 108a which is attached on the first electrode pattern 106b, having a line width wider than the first electrode pattern 106b; and a source/drain expansion region 110 provided under the surface of the active fin 102 on both sides of the first electrode pattern 106b. The FinFET like this has an excellent performance, with reduced GIDL current. COPYRIGHT: (C)2009,JPO&INPIT