发明名称 |
Phase-change memory device using Sb-Se metal alloy and method of fabricating the same |
摘要 |
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
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申请公布号 |
US7547913(B2) |
申请公布日期 |
2009.06.16 |
申请号 |
US20060063991 |
申请日期 |
2006.08.30 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YOON SUNG MIN;LEE NAM YEAL;RYU SANG OUK;LEE SEUNG YUN;PARK YOUNG SAM;CHOI KYU JEONG;YU BYOUNG GON |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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