发明名称 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING PATTERN THEREWITH
摘要 <p>To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of -4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.</p>
申请公布号 EP2157479(A1) 申请公布日期 2010.02.24
申请号 EP20080765543 申请日期 2008.06.12
申请人 FUJIFILM CORPORATION 发明人 TSUBAKI, HIDEAKI
分类号 G03F7/038;C08F220/28;G03F7/004;G03F7/039;G03F7/32;G03F7/40;H01L21/027 主分类号 G03F7/038
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