| 摘要 |
Provided is an organic transistor comprising: materials including a buffer part and a textile including fibers; a gate electrode formed on the materials; a source electrode and a drain electrode electrically insulated with the gate electrode; an organic semiconductor layer, formed on the materials and connecting the source electrode and the drain electrode electrically, including organic semiconductor fibers; and an insulation layer, formed on the materials, for electrically insulating the gate electrode with the source electrode, the drain electrode and the organic semiconductor layer. Due to this composition, the mechanical stability of an element can be secured while minimizing the distortion of the element and maintaining the electric features even when the element is bent or stretched by a wearer. Also, by using the organic semiconductor fibers with light influencing properties or chemical reactivity, forming the organic semiconductor layer of the organic transistor, clothes or protecting equipment can have a function of a light sensor and a chemical sensor. |
