SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve a yield of a semiconductor device that comprises a ferroelectric capacitor and in a method of manufacturing the same.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming an insulating film 15 above a semiconductor substrate 1; forming a conductive film 19 on the insulating film 15; forming a dielectric film 20a on the conductive film 19; forming a plurality of upper electrodes 21a on the dielectric film 20a; forming a first protective insulating film 28 on the upper electrode 21a and the dielectric film 20a by a sputtering method; forming a second protective insulating film 31 on the first protective insulating film 28 by an atom layer deposition method to fill a gap S at a crystal grain boundary of the dielectric film 20a by the second protective insulating film 31; and patterning the conductive film 19 to form a lower electrode 19a after forming the second protective insulating film 31.SELECTED DRAWING: Figure 26