发明名称 PLASMA-ENHANCED ATOMIC LAYER ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of etching a layer on a substrate including at least one etching cycle.SOLUTION: In a method for etching a layer on a substrate including at least one etching cycle, the etching cycle includes a step for providing inert gas continuously to a reaction space, a step for providing a pulse of etching gas to a continuous inert gas flow in the upstream of the reaction space, and chemically adsorbing the etching gas, in non-excited state, to the surface of a substrate in the reaction space, and a step for etching a layer on the substrate by providing a pulse of RF power discharge between the electrodes, in order to generate reaction species in the reaction space.SELECTED DRAWING: Figure 1
申请公布号 JP2016134623(A) 申请公布日期 2016.07.25
申请号 JP20160001928 申请日期 2016.01.07
申请人 ASM IP HOLDING B V 发明人 FUKAZAWA ATSUTAKE
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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