| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for metal organic chemical vapor deposition for a lead germanium oxide (PGO) thin film and for an annealing process, and also to provide a system for performing them. SOLUTION: The method for depositing a ferroelectric PGO thin film is a process of depositing Pb and Ge on a substrate by using a thermal MOCVD process and includes the following steps: a step of separately supplying precursor gases of Pb and Ge into the region adjacent to the substrate; a step of annealing the substrate in a first annealing step; a step of forming an upper electrode on the substrate; and a step of annealing the substrate in a second annealing step. The system contains a reaction chamber having a substrate holder, a substrate placed on the substrate holder, precursor gas lines extending from precursor gas sources to the inside of the reaction chamber, a background gas line for supplying background gas into the reaction chamber, and a separation means for separating the precursor gases until the precursor gases come adjacent to the substrate. |
