| 摘要 |
PURPOSE:To realize microstructure junction dimensions by a method wherein a lower electrode, tunnel barrier layer, and upper electrode are successively formed and then a specified method is applied in a pattern forming process to follow. CONSTITUTION:A rectangular resist pattern is formed containing a junction, after the construction of a three-layer laminate, and reactive ion etching is accomplished by using CF4, whereby an upper electrode Nb film 4 is removed with a portion retained involving the resist pattern. Further, an Ar beam is used for the etching of an Al/Al oxide layer 3 to serve as a tunnel barrier film, and anodization is performed with a lower electrode Nb film 2 exposed, for the formation of an Nb oxide layer 5. A process follows wherein a resist pattern is formed containing a junction portion and lower electrode wiring portion and a CF4-using reactive ion etching process is accomplished against the upper electrode Nb film 4, ion etching using an Ar beam against the Al/Al oxide layer 3, and reactive ion etching using CF4 against the lower electrode Nb film 2. A rectangular resist pattern intersecting said rectangular pattern is formed, which contains the junction portion.
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