| 摘要 |
PURPOSE:To solve a problem that the etching speed of a coating film becomes faster after an insulating film is exposed by a method wherein silicone resin is employed as the material of the coating film in place of organic polymer such as photoresist which is employed in a conventional etching back method. CONSTITUTION:A metal layer 2 is formed on a substrate 1 and an insulating film 3 made of silicone resin is applied. As silicone resin can be applied by spin coating, a flattened layer can be formed by applying it to a stepped part in place of photoresist. On the other hand, as silicone resin has Si-O bonds in its skelton, it is resistant against oxygen but, like SiO2, can be easily etched by gas plasma containing fluorine such as CF4. Therefore, if conditions with which the etching speed of silicone resin and the etching speed of insulating material such as SiO2 are equal are obtained and etching is carried out, etching back can be performed. Moreover, even if the insulating film is exposed and oxygen is emitted, as the silicone resin is hardly etched by oxygen, etching speed does not become faster after the insulating film is exposed to that the flattened layer 3 can be obtained.
|
