发明名称 X-RAY EXPOSURE METHOD
摘要 PURPOSE:To enable high sensitive exposure to all X-ray resists to be performed in an atmosphere, by covering the X-ray resist with an atmosphere-screening film formed of a high molecular material low in a transmission factor for the air, and irradiating the X-ray resist with X rays through this atmosphere- screening film. CONSTITUTION:A X-ray resist 2 is formed on a processed work 1 such as a substrate. The sample formed in this way is covered with an atmosphere- screening film 6 such as saran film to be irradiated with X rays in an atmosphere through a X-ray mask 4. After exposure, the atmosphere-screening film 6 is removed from the processed work 1 coated with X-ray resist, to be developed so that a superior resist pattern 5 is formed. Sensitivity of the X-ray resist in atmospheric exposure can be improved by the atmosphere-scrrening film 6. And, this atmosphere-screening film 6 can be easily assembled/ disassembled to the X-ray resist on X-ray radiation, bringing no bad effect to the later developing process and the resist pattern.
申请公布号 JPS62183119(A) 申请公布日期 1987.08.11
申请号 JP19860025134 申请日期 1986.02.06
申请人 NEC CORP 发明人 NAGASAWA SHUICHI;OKADA KOICHI
分类号 G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/20
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