| 摘要 |
PURPOSE:To reproducibly and uniformly obtain the subject longitudinal semiconductor superlattice by alternately supplying raw material gases respectively containing an element constituting a semiconductor crystal layer to a base plate for growth. CONSTITUTION:A respectively prescribed amount of trimethylgallium and trimethylaluminium are initially alternately supplied onto a GaAs base plate 11 in order and Al and Ga atom planes are grown on a terrace 11a of the base plate crystal surface in the lateral direction to the step. Arsine (AsH3) is then supplied thereto to grow GaAs:15 and AlAs:14. According to the above- mentioned method, AlAs and GaAs are grown in order and a longitudinal superlattice is formed. As a single atom layer growth method where raw materials are alternately supplied is used in the above-mentioned method, deposition of Al on the next terrace can entirely be prevented in growth of GaAs on the remaining terrace part without requirement of accurate control of the growth conditions such as the supply of trimethylgallium, the growth pressure and the growth temperature. An ideal longitudinal superlattice can be formed therefor. |
