| 摘要 |
PURPOSE:To improve rectangularity by exposing a photosensitive resin film applied on a substrate to a halogen under a reduced pressure before exposing in the case of a negative type and after the exposing in the case of a positive type, then heating the resin film. CONSTITUTION:The resist film 2a is exposed to the gaseous halogen 9 before the exposing in the case of the negative type resist. The resist 2a is heated after the exposing by which the gaseous halogen is adsorbed on the resist sur face. The adsorbed halogen degrades the solubility of the resist 2a in a devel oper. Further, radicals 7 are formed by photoirradiation. These radicals are diffused into the resist by heating and the solubility of the resist 2a changes in the depth direction of the resist. With the positive resist, the resist is subjected to the gaseous halogen treatment after exposing and is heated, by which the halogen is adsorbed to the resist surface and the adsorbed halogen degrades the solubility of the resist in the developer, by which the difference in the dissolving rate between exposed parts and unexposed parts is increased. The resist profile having the good rectangularity is obtd. in this way. |
