| 摘要 |
<p>PURPOSE:To enable partial deviations of the stage of etching to be corrected, by controlling the respective spraying quantities, pressures, temperatures and concentrations of the respective etching liquids of a plurality of nozzles through feeding back the sensed results of a line sensor. CONSTITUTION:An etching liquid is sprayed on the surface of a rotating wafer 3, which is sucked by a vacuum chuck, from a plurality of nozzles 6a-6h provided on the surrounding of the wafer 3, and the etching of the surface of the wafer 3 is advanced. On the other hand, the state, in which the etching of the surface of the wafer 3 is advanced, is sensed by a line sensor 4a. According to the sensed results of the line sensor 4a, an etching liquid controlling device 9 controls the respective spraying quantities per unit time, pressures, temperatures and concentrations of the respective etching liquids, which are extended via respective etching liquid feeding devices to the respective nozzles 6a-6h, and so adjusts them that the etching of the whole surface of the wafer 3 is brought uniform. Thereby, the whole surface of the wafer can uniformly be etched.</p> |
