| 摘要 |
PURPOSE:To analize in a non-contact state the working condition of the MOS transistor, which is coated with the metal wiring arranged on a substrate and over through the upper part of anelement, in a semiconductor chip. CONSTITUTION:A fault can be analyzed in a non-contact way by electron beam irradiation by providing an aperture 8 on the aluminum wiring 7 and the like such as a power source system and the like which pass through over the element constituting an input protective part, where breakdown easily occurs, or an output transistor part. |
