摘要 |
<p>A two step back-side hydrogenation process includes the steps of first bombarding the back side (24) of the silicon substrate (12) with hydrogen ions (30) with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate (12) to potentially passivate substantially all the defects and impurities in the silicon substrate (12), and then illuminating the silicon substrate (12) with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two stage illumination schedule (34), the first or low power stage (38) of which subjects the substrate (12) to electromagnetic radiation having sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate (12). The second or high power illumination stage (40) subjects the substrate (12) to higher intensity electromagnetic radiation which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts (28).</p> |