Sense amplifier enable signal generating circuit of semiconductor memory devices

摘要

A sense amplifier enable signal generating circuit of a semiconductor memory device includes: a sense amplifier enable signal generating section for receiving an input signal externally applied, and generating a sense amplifier enable signal; a delay section for delaying the sense amplifier enable signal generated from the sense amplifier enable signal generating section; a detecting section for detecting the variation of a power supply voltage in accordance with a control signal externally applied, and generating a detection signal for the variation; a transfer section for transferring the delayed sense amplifier enable signal of the delay section in accordance with the detection signal generated from the detecting means; and an output section for receiving the sense amplifier enable signal generated from the sense amplifier enable signal generating means and the delayed sense amplifier enable signal of the delay section, and generating an output signal having a constant pulse width.