| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory made into a high speed and highly-integrated device. SOLUTION: On an SIMOX substrate having a plurality of STIs and first conductivity type semiconductor layers 5 alternately disposed in the row direction, a laminate structure SS composed of a first polycrystalline Si 31, a second gate insulation film 35 and a second polycrystalline Si 41 formed on a gate insulation film 25 with the first conductivity type semiconductor layers are formed. Second conductivity type source regions 51 and drain regions 55 are formed in the first conductivity type semiconductor layers at both sides thereof. A source region connecting second conductivity type semiconductor layer 63 and common source lines CSL composed of a conductive film formed thereon and on the source regions 51 are formed between a plurality of source regions adjacent in the column direction between the laminate structures SS.
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