发明名称 Method for forming thin film and apparatus for forming thin film
摘要 A shower head 9 having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate 10 and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace 8 of an MOSVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head 9. <IMAGE>
申请公布号 AU6632501(A) 申请公布日期 2002.01.02
申请号 AU20010066325 申请日期 2001.06.25
申请人 TOKYO ELECTRON LIMITED;NEC CORPORATION 发明人 HIROSHI SHINRIKI;KENJI MATSUMOTO;TORU TATSUMI
分类号 C23C16/40;C23C16/44;C23C16/452;C23C16/455;C30B25/14;H01L21/205;H01L21/31;H01L21/314;H01L21/316 主分类号 C23C16/40
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