| 摘要 |
PROBLEM TO BE SOLVED: To achieve a small-sized IGBT module which is a thin type and has large capacitance by ensuring creepage distances between a bottom surface metal substrate and each terminal, and between terminals needing insulation by using small regions in a power semiconductor device of an internal insulation type. SOLUTION: In order to ensure the creepage distances by using small regions, an insulating trench is arranged on a module surface with which a bottom surface of a fixing bolt is in contact. Miniaturization and thinning are enabled by arranging the insulating trench on the module surface with which the bottom surface of the fixing bolt is in contact, and ensuring the creepage distances between the bottom surface metal substrate and each of the terminals, and between the terminals necessary for insulation by using small regions. |
