| 摘要 |
<p>A semiconductor imaging device (40) includes a photodetection region (10D) formed of a diffusion region (41D) of a first conductivity type formed in an active region (41A) of a silicon substrate at a first side of a gate electrode (43) such that a top part thereof is separated from a surface of the silicon substrate (41) and such that an inner edge part invades underneath a channel region right underneath the gate electrode (43), a shielding layer (41P+) formed of a second conductivity type at a surface of the silicon substrate (41) at the first side of the gate electrode (43) such that an inner edge part thereof is aligned with a sidewall surface of the gate electrode (43) at the first side, a floating diffusion region (FD) formed in the active region (41A) at a second side of the gate electrode (43), and a channel region formed right underneath said gate electrode (43), wherein the channel region includes a first channel region part formed adjacent to the shielding layer (41P+) and a second channel region part formed adjacent to the floating diffusion region (FD), wherein the second channel region part contains an impurity element with a concentration level lower than the impurity concentration level of the first channel region part.</p> |
